Gallium Nitride (GaN) semiconductors are transforming power electronics, driving innovation across industries from automotive and renewable energy to telecommunications and consumer electronics. In the five years since Nexperia launched its first GaN devices, this process technology has rapidly transitioned from an emerging technology to a mainstream choice. Answering the demand for more efficient, compact and high-performing devices, and addressing challenges that traditional silicon-based systems cannot overcome.
Over the last few years, GaN has become firmly established as a mainstream option for power electronics. Its high-frequency switching is critical for efficiently powering energy-intensive systems in telecommunications and cloud / AI infrastructure. At the same time, it is key to extending electric vehicle (EV) range and improving charging speeds, while maximizing energy yield in solar inverters and energy storage systems. And compact and efficient GaN-based adapters have revolutionized charging for smartphones and laptops. As industries continue to innovate, GaN’s role is set to only expand.
Bridging the transition with cascode
From Nexperia’s perspective, the initial focus was on delivering robust high-voltage (650 V) solutions to address growing demands of vehicle electrification and always-on infrastructure. To achieve this, cascode topology where a GaN high-electron-mobility transistor (HEMT) is combined with a low-voltage silicon MOSFET in a single package was the obvious choice.
Leveraging the MOSFET’s gate control while benefiting from the GaN HEMT’s fast switching and low losses, delivers highly reliable operation for high-voltage, high-power applications. And by maintaining compatibility with existing silicon MOSFET designs, cascode GaN devices facilitate a gradual transition for power systems upgrading to GaN technology.
E-mode eases the move to mainstream
But of course, not every application requires robust, high-voltage, high-power operation. And GaN, through its enhancement mode, is flexible enough to address a much wider range of applications – from high-voltage, low-mid power to both low- and high-power at lower voltages. Enabling simple, more compact designs, e-mode GaN transistors achieve unparalleled energy efficiency in terms of both power and footprint for a host of different applications.
In fact, Nexperia’s latest portfolio enhancements include:
- 700 V devices for adaptors, led drivers and PFC (power factor correction) with an on-state resistance < 350 mΩ
- 650 V devices for adaptors, led drivers and AC/DC converters with an on-state resistance < 350 mΩ
- 100 V and 150 V devices for consumer power supplies (SR), data / telecommunications DC/DC conversion, photovoltaic (PV) micro inverters, Class-D audio amplifiers and e-bike motor drive with an on-state resistance < 7 mΩ
- and 40 V bidirectional FETs for OVP and load switch in battery management systems (BMS) (Which technology is best for your battery protection?) for mobile phones / laptop / etc. with an on-state resistance < 12 mΩ
Powering the future of electronics
For decades, silicon (Si) has been the backbone of power electronics. However, as the demand for greater efficiency, reduced energy losses and smaller form factors has intensified, Si has begun to reach its physical limits. GaN's unique material properties make it a game-changer. As industries continue to demand more from power electronics, GaN is playing an ever-expanding role in driving innovation and sustainability. And Nexperia’s growing portfolio offers the broadest choice of voltage, power and RDS(on), giving every designer an option to tap into the future of power electronics.
